s 9 012 pnp silicon epitaxial planar transistor for switching and amplifie r applications. especially suitable for af-driver stages and low power output stages. the transistor is subdivi ded into three groups, g, h and i, according to its dc current gain. as complementary type the npn transistor 9013 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 40 v collector emitter voltage -v ceo 30 v emitter base voltage -v ebo 5 v collector current -i c 500 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -v ce = 1 v, -i c = 50 ma current gain group at -v ce = 1 v, -i c = 500 ma g h i h fe h fe h fe h fe 110 1 9 0 2 9 0 40 2 00 3 0 0 380 - - - - - collector base cutoff current at -v cb = 35 v -i cbo - 100 na emitter base cutoff current at -v eb = 5 v -i ebo - 100 na collector base breakdown voltage at -i c = 100 a -v (br)cbo 40 - v collector emitter breakdown voltage at -i c = 1 ma -v (br)ceo 30 - v emitter base breakdown voltage at -i e = 100 a -v (br)ebo 5 - v collector emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v ce(sat) - 0.6 v base emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v be(sat) - 1.2 v base emitter voltage at -v ce = 1 v, -i c = 100 ma -v be - 1 v gain bandwidth product at -v ce = 6 v, -i c = 20 ma f t 100 - mhz 1. emitter 2. base 3. collector to-92 plastic package
s 9 012
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